BUK9514-30127 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BUK9514-30127
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9514-30127 Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 69 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 125 mJ Drain-source On Resistance-Max: 0.0140 ohm Pulsed Drain Current-Max (IDM): 240 A
• Количество страниц
  6 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  227,83 KB

BUK9514-30127 datasheet скачать

BUK9514-30127 datasheet